MARVEL Series Laser Cutting Machine
SMART Series Laser Cutting Machine
Wafer Laser Modified Cutting Equipment Wafer Cutting Series
This equipment is used for laser modification and cutting of silicon-based wafers in the semiconductor industry for 8-inch and above chip sealing and testing plants.
FARLEY LASERLAB AUTO: Wafer Laser Cutting Machine
Wafer Laser Modified Cutting Equipment
This equipment is used for laser modification and cutting of silicon-based wafers in the semiconductor industry for 8-inch and above chip sealing and testing plants.
Wafer Laser Modified Cutting Equipment Wafer Cutting Series
This equipment performs laser modification and cutting for 8-inch+ silicon-based wafers, featuring ultra-small edge collapse, multi-focus high efficiency and stable laser output.
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Features:
Zero surface damage
Smooth edge < 3μm
Laser power stability ≤±3%
Edge collapse ≤ 2μm
Multi-focus high efficiency
High beam quality M²＜1.5
Wafer Laser Modified Cutting Equipment – Technical Specifications
6/12inch silicon wafer laser modification hidden cutting equipment, internal modification without mechanical damage, narrow wafer design to improve wafer utilization rate, suitable for ultra-thin wafer processing.
| Item | Main parametetrs | |
|---|---|---|
| Laser | Center wavelength | Custom infrared wavelength |
| Cutting head | Self-developed collimating head | |
| Performance | Effective working stroke | 300x400mm(optional) |
| Repetitive positioning accuracy | ±1μm | |
| Visual positioning | Automatic visual positioning | |
| Processing method | Layer by layer upgrading, single point / multi-point processing | |
| Others | Wafer size | 8 inch （12inch is compatible ） |
| Processing process | Laser modified cutting – film spreading | |
| Processing object | MEMS chip, silicon-based biochip, silicon wheat chip, CMOS chip, etc | |
Schematic diagram of cutting section
8 inch silicon-based wafer, single point layer by layer modification, thickness 730 μ m.
Upper surface (chip structure surface)
8 inch silicon-based wafer, single point layer by layer modification, thickness 730 μ m.
Lower surface: chip structure surface
8 inch silicon-based wafer, single point layer by layer modification, thickness 730 μ m.
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